Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor

ABSTRACT

Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device includes: a substrate; a first electrode and a second electrode which are formed in parallel to each other on the substrate, each of the first electrode and the second electrode comprising two electrode pads separated from each other and a heating element that connect the two electrode pads; a catalyst metal layer formed on the heating element of the first electrode; and a carbon nanotube connected to the second electrode by horizontally growing from the catalyst metal layer; wherein the heating elements are separated from the substrate by etching the substrate under the heating elements of the first and the second electrodes.

CROSS-REFERENCE TO RELATED PATENT APPLICATION AND CLAIM OF PRIORITY

This application claims the benefit of Korean Patent Application No.10-2006-0107933, filed on Nov. 2, 2006, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an electronic device, a field effecttransistor, and a method of manufacturing the electronic device, andmore particularly, to an electronic device that includes carbonnanotubes horizontally grown from a catalyst layer formed a heatingelement formed in an electrode, a field effect transistor having theelectronic device, and a method of manufacturing the electronic deviceand the field effect transistor.

2. Description of the Related Art

Carbon nanotubes are potentially useful in a variety of applicationssince they have good mechanical and chemical characteristics, highelectrical conductivity, and can be easily grown to a diameter from afew nanometers or a few tens nanometers to a micrometers unit. Thus,research on the application of carbon nanotubes in various fields hasbeen actively conducted. For example, the application of the carbonnanotubes are expanded in emission devices, optical switches for opticalcommunication, or bio devices.

Carbon nanotubes can be formed by an arc discharge method, a laserablation method, a chemical vapor deposition method, a screen printingmethod, and a spin coating method, and these methods are well known inthe art.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the invention andtherefore it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY OF THE INVENTION

The present invention provides an electronic device that includes carbonnanotubes horizontally grown from a heating element formed on anelectrode, and a field effect transistor having the electronic device.

The present invention also provides a method of manufacturing theelectronic device and the field effect transistor.

According to an aspect of the present invention, there is provided anelectronic device comprising: a substrate; a first electrode formed onthe substrate, the first electrode comprising: a couple of firstelectrode pads separated from each other; a first heating element thatconnects the couple of the first electrode pads to each other, the firstheating element separated from the substrate; and a catalyst layerformed on the first heating element of the first electrode; a secondelectrode formed on the substrate, the second electrode being inparallel to the first electrode, the second electrode comprising: acouple of second electrode pads separated from each other; and a secondheating element that connects the couple of the second electrode pads toeach other, the second heating element separated from the substrate; anda carbon nanotube grown from the catalyst layer, the carbon nanotubeconnecting the first electrode and the second electrode.

The electronic device may further comprise a fixing layer which may bemade of a low melting point material, particularly, a low melting pointmetal for fixing the carbon nanotube horizontally grown from theconnected to an end of the carbon nanotube on the second heating elementof the second electrode.

The low melting point metal layer may be formed of Al or Cu.

The first and second heating elements may be formed of a materialselected from the group consisting of Mo, W, SiC, and MoSi₂.

Each of the first and the second electrodes may be formed in one unitusing one metal.

The carbon nanotube may be a single walled-carbon nanotube.

According to another aspect of the present invention, there is provideda field effect transistor comprising the electronic device which furthercomprises a gate electrode formed on the substrate.

According to still another aspect of the present invention, there isprovided a method of manufacturing an electronic device, comprising: (a)forming a first electrode and a second electrode which are parallel toeach other on a substrate, the first electrode comprising a couple offirst electrode pads and a first heating element connecting the coupleof the first electrode pads to each other, the second electrodecomprising a couple of second electrode pads and a second heatingelement connecting the couple of the second electrode pads to eachother; (b) forming a catalyst layer on the first heating element of thefirst electrode; (c) etching at least a portion of the substrate underthe first and second heating elements of the first and secondelectrodes; (d) forming an electric field directed from the firstelectrode towards the second electrode by respectively applying apredetermined voltage to each of the first and second electrode pads ofthe first and second electrodes in order to generate heat from the firstheating element to heat the catalyst layer to a first temperature; and(e) growing a carbon nanotube from the catalyst layer using a gascontaining carbon atoms to be connected to the second electrode.

The operation (b) may further comprise forming a fixing layer on thesecond heating element of the second electrode to fix the end of thecarbon nanotube grown from the catalyst layer; and the operation (d)further comprises heating the fixing layer to a second temperature whichis lower than a melting point of the fixing layer. The operation (e) maycomprise fixing the carbon nanotube on the fixing layer such that an endof the carbon nanotube contacts the fixing layer.

The operation (d) may comprise forming an electric field having anintensity of 1V/μm or higher.

In the operation (d), the first temperature may be approximately 900 to1,000° C., and the operation (e) may comprise forming a single-walledcarbon nanotube.

According to still further another aspect of the present invention,there is provided a method of manufacturing a field effect transistor,comprising: (a) forming a gate electrode on a substrate; (b) forming afirst electrode and a second electrode which are parallel to each otheron the substrate, the first electrode comprising a couple of firstelectrode pads and a first heating element connecting the couple of thefirst electrode pads to each other, the second electrode comprising acouple of the second electrode pads and a second heating elementconnecting the couple of the second electrode pads; (c) forming acatalyst layer on the first heating element of the first electrode; (d)etching at least a portion of the substrate under the first and secondheating elements of the first and second electrodes; (e) forming anelectric field directed from the first electrode towards the secondelectrode by applying a respective predetermined voltage to each of thefirst and second electrode pads of the first and second electrodes inorder to generate heat from the first heating element to heat thecatalyst layer to a first temperature; and (f) growing a carbon nanotubefrom the catalyst layer using a gas containing carbon atoms to beconnected to the second electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention, and many of the attendantadvantages thereof, will be readily apparent as the same becomes betterunderstood by reference to the following detailed description whenconsidered in conjunction with the accompanying drawings in which likereference symbols indicate the same or similar components, wherein:

FIG. 1 is a plan view illustrating an electronic device according to anembodiment of the present invention;

FIGS. 2 through 4 are cross-sectional views taken along lines II-II,III-III, and IV-IV of FIG. 1, respectively;

FIG. 5 is a schematic drawing showing equipotential lines of an electricfield when predetermined voltages are respectively applied to electrodepads of the electronic device of FIG. 1;

FIGS. 6A through 6F are cross-sectional views illustrating a method ofmanufacturing an electronic device according to an embodiment of thepresent invention;

FIG. 7 is a plan view illustrating a field effect transistor accordingto another embodiment of the present invention;

FIGS. 8 through 10 are cross-sectional views taken along linesVIII-VIII, IX-IX, and X-X of FIG. 7, respectively; and

FIGS. 11A through 11H are cross-sectional views illustrating a method ofmanufacturing a field effect transistor according to another embodimentof the present invention.

DETAILED DESCRIPTION OF THE INVENTION

An electronic device and a field effect transistor according toembodiments of the present invention will now be described more fullywith reference to the accompanying drawings in which exemplaryembodiments of the invention are shown.

FIG. 1 is a plan view illustrating an electronic device 100 according toan embodiment of the present invention. FIGS. 2 through 4 arecross-sectional views taken along lines II-II, III-III, and IV-IV ofFIG. 1.

Referring to FIG. 1, the electronic device 100 includes a firstelectrode 110 and a second electrode 120 formed in parallel on asubstrate 102 and a carbon nanotube 130 that connects the first and thesecond electrodes 110 and 120.

Referring to FIGS. 1 and 2, the first electrode 110 includes twoelectrode pads 112 separated from the substrate 102 by an insulatinglayer 104 and a heating element 114 that connects the two electrode pads112. A catalyst layer, which may be a catalyst metal layer 116 forgrowing the carbon nanotube 130 is formed on the heating element 114.

The heating element 114 can be formed of one of Mo, W, SiC, and MoSi₂.Heat is generated according to Joule's law (Joule's heat) from theheating element 114 by applying a predetermined voltage to the electrodepads 112 connected to the heating element 114, and the Joule's heatheats the catalyst layer 116.

The substrate 102 under the heating element 114 is isotropically etched.The isotropical etching of the substrate 102 allows the heating element114 to be separated from the substrate 102. Therefore, waste of Joule'sheat generated at the heating element 114 through the substrate 102 isprevented.

The carbon nanotube 130 is grown from the catalyst metal layer 116, andmay be a single-walled carbon nanotube grown at a temperature ofapproximately 900 to 1,000° C.

Referring to FIGS. 1 and 3, the second electrode 120 includes twoelectrode pads 122 separated from the substrate 102 by the insulatinglayer 104 and a heating element 124 that connects the two electrode pads122. A fixing layer, which may be a low melting point metal layer 126formed of a low melting point metal which has a melting point of about400 to 700° C., for example, Al or Cu is formed on the heating element124. If the low melting point metal layer 126 is formed of, for example,Al, the low melting point metal layer 126 has adhesiveness at atemperature lower than the melting point thereof by approximately 50 to100° C., and fixes the carbon nanotube 130 by contacting an end of thecarbon nanotube 130 grown from the catalyst metal layer 116.

The heating element 124 may be formed of the same material for formingthe heating element 114. Joule's heat is generated from the heatingelement 124 by applying a predetermined voltage to the electrode pads122 connected to the heating element 124, and the Joule's heat heats thelow melting point metal layer 126.

The substrate 102 under the heating element 124 is isotropically etched.The isotropical etching of the substrate 102 allows the heating element124 to be separated from the substrate 102.

Referring to FIGS. 1 and 4, the heating element 114 heated to apredetermined temperature, for example, 1,000° C. on the substrate 102horizontally grows the carbon nanotube 130 from the catalyst metal layer116 using a gas containing carbon atoms. At this point, the low meltingpoint metal layer 126 formed of Al which is heated to a temperature ofapproximately 400 to 450° C. by the heating element 124 is in a statejust before melting, and contacts an end of the grown carbon nanotube130. Thus, in a cooling process, the low melting point metal layer 126fixes the carbon nanotube 130 on the heating element 124. At this point,an electric field is formed from the catalyst metal layer 116 to the lowmelting point metal layer 126 by applying a voltage to the electrodepads 112 and 122, and the electric field horizontally grows the carbonnanotube 130 from the catalyst metal layer 116 to contact the lowmelting point metal layer 126.

FIG. 5 is a schematic drawing showing equipotential lines of an electricfield when predetermined DC or pulse voltages are respectively appliedto the electrode pads 112 and 122 of FIG. 1. The electric field isapplied in a direction perpendicular to a line between the twoequipotential lines, that is, the directions indicated by the arrows inFIG. 5. The direction of the electric field is also the growingdirection of the carbon nanotube 130. The electrode pads 112 of thefirst electrode 110 and the electrode pads 122 of the second electrode120 are separated by a distance of approximately 10 μm, and theintensity of the electric field between the first and second electrodes110 and 120 is approximately 1V/μm.

FIGS. 6A through 6F are cross-sectional views illustrating a method ofmanufacturing an electronic device according to an embodiment of thepresent invention. Like reference numerals are used to indicate elementsthat are substantially identical to the elements of FIGS. 1 through 4,and thus the detailed description thereof will not be repeated.

Referring to FIG. 6A, a substrate 102, for example, a silicon substrateor a glass substrate is prepared. An insulating layer 104 and anelectrode layer 111 are stacked on the substrate 102. The electrodelayer 111 can be formed of Al, Cr, Mo, or W.

Referring to FIG. 6B, electrode pads 112 and 122 of the first and thesecond electrodes 110 and 120, respectively, are formed by patterningthe electrode layer 111.

Referring to FIG. 6C, a heater layer 113 covering the electrode pads 112and 122 is formed on the insulating layer 104. The heater layer 113 canbe formed of Mo, W, SiC, or MoSi₂. In this case, the heater layer 113 isformed of a material having wet etch selectivity with respect to amaterial for forming the electrode layer 111. For example, when theelectrode layer 111 is formed of Cr, the heater layer 113 can be formedof Mo. Also, when the electrode layer 111 formed of Al, the heater layer113 can be formed of MoSi₂.

Referring to FIG. 6D, heating elements 114 and 124 that respectivelyconnect the two electrode pads 112 or 122 are formed by patterning theheater layer 113.

Referring to FIG. 6E, after a metal layer for catalyst (not shown) isformed on the substrate 102 using a sputtering or e-beam evaporationmethod, a catalyst metal layer 116 is formed on the heating element 114by patterning the metal layer for catalyst. The catalyst metal layer 116can be formed of Ni, Fe, Co, or an alloy of these metals.

Next, after a metal layer having low melting point (not shown) is formedon the substrate 102 using a sputtering or e-beam evaporation method, alow melting point metal layer 126 is formed on the heating element 124by patterning the metal layer having low melting point. The low meltingpoint metal layer 126 can be formed of Al or Cu. If the low meltingpoint metal layer 126 does not have wet etch selectivity with respect tothe electrode pads 112 and 122 and the heating elements 114 and 124,after a mask that exposes a region for forming the low melting pointmetal layer 126 is formed in advance, the metal layer having low meltingpoint is deposited on the mask, and then, the mask can be lifted-off.

The catalyst metal layer 116 can also be formed using the lift-offprocess.

Referring to FIG. 6F, regions of the insulating layer 104 and thesubstrate 102 between the heating elements 114 and 124 are isotropicallyetched to a predetermined depth. As a result, the heating elements 114and 124 are suspended like a bridge. The purpose of the etching is toform a localized heating region by preventing the flow of heat to theinsulating layer when a current is applied to the heating elements 114and 124.

Next, the substrate 102 is placed in a vacuum chamber (not shown).Afterwards, electric fields are formed between the heating elements 114and 124 by respectively applying a predetermined DC voltage or a pulsevoltage to each of the electrode pads 112 and 122 as depicted in FIG. 5.At the same time, the catalyst metal layer 116 on the heating element114 is maintained at a temperature of approximately 1,000° C., and thelow melting point metal layer 126 on the heating element 124 ismaintained at a temperature lower than the melting point of the lowmelting point metal layer 126 by approximately 50 to 100° C. Next, thecarbon nanotube 130 is horizontally grown from the catalyst metal layer116 toward the low melting point metal layer 126 by blowing a hydrogencontaining gas, for example, ethylene gas into the vacuum chamber. Anend of the grown carbon nanotube 130 is fixed on the low melting pointmetal layer 126 when the carbon nanotube 130 contacts the low meltingpoint metal layer 126.

The intensity of the electric field between the heating elements 114 and124 may be approximately 1V/μm or higher.

In the method described above, the heating elements 114 and 124 and theelectrode pads 112 and 122 of the first and the second electrodes 110and 120 are formed of different materials from each other, but thepresent invention is not limited thereto. That is, when the electrodepads 112 and 122 of the first and the second electrodes 110 and 120 andthe heating elements 114 and 124 are formed of the same material, forexample, W or Mo, after forming a metal layer on an insulating layer,the electrode pads 112 and 122 and the heating elements 114 and 124 canbe formed together by patterning the metal layer.

FIG. 7 is a plan view illustrating a field effect transistor 200according to another embodiment of the present invention, and FIGS. 8through 10 are cross-sectional views taken along lines VIII-VIII, IX-IX,and X-X of FIG. 7.

Referring to FIG. 7, the field effect transistor 200 includes a firstelectrode 210 and a second electrode 220 formed in parallel on asubstrate 202, a carbon nanotube 230 that connects the first electrode210 to the second electrodes 220, and a gate electrode 240 located belowthe carbon nanotube 230. One of the first and the second electrodes 210and 220 is a source electrode and the other is a drain electrode.

Referring to FIGS. 7 and 8, the first electrode 210 includes twoelectrode pads 212 separated from the substrate 202 by an insulatinglayer 204 and a heating element 214 that connects the two electrode pads212. A catalyst layer, which may be a catalyst metal layer 216, forgrowing the carbon nanotube 230 is formed on the heating element 214.

The heating element 214 can be formed of one of Mo, W, SiC, and MoSi₂.Joule's heat is generated from the heating element 214 by applying apredetermined voltage to the electrode pads 212 connected to the heatingelement 214, and the Joule's heat heats the catalyst metal layer 216.

The substrate 202 under the heating element 214 is isotropically etched.The isotropical etching of the substrate 202 allows the heating element214 to be separated from the substrate 202, and thus, waste of Joule'sheat generated at the heating element 214 through the substrate 102 isprevented.

The carbon nanotube 230 is grown from the catalyst metal layer 216, andmay be a single-walled carbon nanotube grown at a temperature ofapproximately 900 to 1,000° C.

Referring to FIGS. 7 and 9, the second electrode 220 includes twoelectrode pads 222 separated from the substrate 202 by the insulatinglayer 204 and a heating element 224 that connects the two electrode pads222. A fixing layer which may be a low melting point metal layer 226formed of, for example, Al or Cu is formed on the heating element 224.If the low melting point metal layer 226 is formed of, for example, Al,the low melting point metal layer 226 becomes fluid at a temperaturelower than the melting point thereof by approximately 50 to 100° C., andfixes the carbon nanotube 230 by contacting an end of the carbonnanotube 230 grown from the catalyst metal layer 216.

The heating element 224 may be formed of the same material for formingthe heating element 214. Joule's heat is generated from the heatingelement 224 by applying a predetermined voltage to the electrode pads222 connected to the heating element 224, and the Joule's heat heats thelow melting point metal layer 226.

The substrate 202 under the heating element 224 is isotropically etched.The isotropical etching of the substrate 202 allows the heating element224 to be separated from the substrate 202.

Referring to FIGS. 7 and 10, a gate electrode 240 is formed on thesubstrate 202 below the carbon nanotube 230 between the first and secondelectrodes 210 and 220. The gate electrode 240 may be insulated from thesubstrate 202 by an insulating layer 203. The heating elements 214 and224 are respectively separated from the substrate 202. Accordingly, theheating elements 214 and 224 are formed on the insulating layer 204, andhave a bridge shape.

The catalyst metal layer 216 and the low melting point metal layer 226are respectively formed on the heating elements 214 and 224. The carbonnanotube 230 connects the catalyst metal layer 216 and the low meltingpoint metal layer 226.

FIGS. 11A through 11H are cross-sectional views illustrating a method ofmanufacturing a field effect transistor according to another embodimentof the present invention. Like reference numerals are used to indicateelements that are substantially identical to the elements of FIGS. 7through 10, and thus the detailed description thereof will not berepeated. The manufacturing method will be explained with respect toFIG. 10, although electrode pads under heating elements are shown forconvenience.

Referring to FIG. 11A, a substrate 202, for example, a silicon substrateor a glass substrate is prepared. A first insulating layer 203 and afirst electrode layer 241 are stacked on the substrate 202. The firstelectrode layer 241 can be formed of Al, Cr, Mo, or W. If the substrate202 is a non-conductive layer, forming of the first insulating layer 203may be omitted.

Referring to FIG. 11B, a gate electrode 240 is formed by patterning thefirst electrode layer 241.

Referring to FIG. 11C, a second insulating layer 204 covering the gateelectrode 240 is formed on the first insulating layer 203. The secondinsulating layer 204 is formed to have a thickness greater than that ofthe gate electrode 240. A second electrode layer 211 is formed on thesecond insulating layer 204.

Referring to FIG. 11D, electrode pads 212 and 222 of first electrode 210and second electrode 220 are formed by patterning the second electrodelayer 211.

Referring to FIG. 11E, a heater layer 213 covering the electrode pads212 and 222 is formed on the second insulating layer 204 using Mo, W,SiC, or MoSi₂. In this case, the heater layer 213 is formed of amaterial having wet etch selectivity with respect to a material forforming the second electrode layer 211. For example, if the secondelectrode layer 211 is formed of Cr, the heater layer 213 can be formedof Mo. Also, if the second electrode layer 211 is formed of Al, theheater layer 213 can be formed of MoSi₂.

Referring to FIG. 11F, a heating element 214 connecting the pair of theelectrode pads 212 and a heating element 224 connecting the pair of theelectrode pads 222 are respectively formed by patterning the heaterlayer 213 (refer to FIGS. 8 and 9).

Referring to FIG. 11G, after forming a metal layer for catalyst (notshown) on the substrate 202 using a sputtering or e-beam evaporationmethod, a catalyst metal layer 216 is formed on the heating element 214by pattering the metal layer for catalyst. The catalyst metal layer 216can be formed of Ni, Fe, Co, or an alloy of these metals.

Next, after forming a metal layer having a low melting point (not shown)on the substrate using a sputtering or e-beam evaporation method, a lowmelting point metal layer 226 is formed on the heating element 224 bypatterning the metal layer having low melting point. The low meltingpoint metal layer 126 can be formed of Al or Cu. If the low meltingpoint metal layer 226 does not have wet etch selectivity with respect tothe electrode pads 212 and 222 and the heating elements 214 and 224,after a mask that exposes a region for forming the low melting pointmetal layer 226 is formed in advance, the low melting point metal layer226 is deposited on the mask, and then, the mask can be lifted-off.

The catalyst metal layer 216 can also be formed using a lift-offprocess.

Referring to FIG. 11H, the first insulating layer 203, the secondinsulating layer 204 and the substrate 202 under the heating elements214 and 224 are isotropically etched to a predetermined depth. Theheating elements 214 and 224 are separated from the substrate 202 like abridge (referring to FIGS. 8 and 9). The purpose of these etching is toform localized heating regions on the catalyst metal layer 216 and thelow melting point metal layer 226 by preventing the flow of heat to thefirst insulating layer 203, the second insulating layer 204, and thesubstrate 202 when a current is applied to the heating elements 214 and224.

Next, the substrate 202 is placed in a vacuum chamber (not shown).Afterwards, electric fields are formed between the heating elements 214and 224 by respectively applying a predetermined DC voltage or a pulsevoltage to each of the electrode pads 212 and 222 as depicted in FIG. 5.At the same time, the catalyst metal layer 216 on the heating element214 is maintained at a temperature of approximately 1,000° C., and thelow melting point metal layer 226 on the heating element 224 ismaintained at a temperature lower than the melting point of the lowmelting point metal layer 226 by approximately 50 to 100° C. Next, thecarbon nanotube 230 is horizontally grown from the catalyst metal layer216 toward the low melting point metal layer 226 by blowing a hydrogencontaining gas, for example, ethylene gas into the vacuum chamber. Anend of the grown carbon nanotube 230 is fixed on the low melting pointmetal layer 226 when the carbon nanotube 230 contacts the low meltingpoint metal layer 226.

At this point, the intensity of the electric field between the heatingelements 214 and 224 may be approximately 1V/μm or higher.

In the method described above, the heating elements 214 and 224 and theelectrode pads 212 and 222 of the first and the second electrodes 210and 220 are formed of different materials from each other, but thepresent invention is not limited thereto. That is, when the electrodepads 212 and 222 of the first and the second electrodes 210 and 220 andthe heating elements 214 and 224 are formed of the same material, forexample, W or Mo, after forming a metal layer on an insulating layer,the electrode pads 212 and 222 and the heating elements 214 and 224 canbe formed together by patterning the metal layer.

In an electronic device and a field effect transistor according toembodiments of the present invention, a carbon nanotube can be grown byheating a heating element at room temperature. Therefore, thermal damageto substrate and other devices can be prevented.

Also, since the carbon nanotube is fixed on a low melting point metallayer, an additional process for fixing the carbon nanotube is notrequired.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. An electronic device comprising: a substrate; a first electrodeformed on the substrate, the first electrode comprising: a couple offirst electrode pads separated from each other; a first heating elementconnecting the couple of the first electrode pads to each other, thefirst heating element separated from the substrate; and a catalyst layerformed on the first heating element; a second electrode formed on thesubstrate, the second electrode being in parallel to the firstelectrode, the second electrode comprising: a couple of second electrodepads separated from each other; and a second heating element thatconnects the couple of the second electrode pads to each other, thesecond heating element separated from the substrate; and a carbonnanotube grown from the catalyst layer, the carbon nanotube connectingthe first electrode and the second electrode.
 2. The electronic deviceof claim 1, wherein the second electrode further comprises a fixinglayer formed on the second heating element of the second electrode tofix the end of the carbon nanotube grown from the catalyst layer.
 3. Theelectronic device of claim 2, wherein the fixing layer comprises a lowmelting point metal layer.
 4. The electronic device of claim 3, whereinthe low melting point metal layer is formed of Al or Cu.
 5. Theelectronic device of claim 1, wherein the first heating element and thesecond heating element are formed of material independently selectedfrom the group consisting of Mo, W, SiC, and MoSi₂.
 6. The electronicdevice of claim 1, wherein the couple of the first electrode pads, thecouple of the second electrode pads, the first heating element and thesecond heating element are formed of the same material.
 7. Theelectronic device of claim 1, wherein the catalyst layer comprises acatalyst metal layer comprised of Ni, Fe, Co, or an alloy thereof. 8.The electronic device of claim 1, wherein the carbon nanotube is asingle walled-carbon nanotube.
 9. A field effect transistor comprisingthe electronic device of claim 1, wherein the electronic device furthercomprises a gate electrode formed on the substrate.
 10. A method ofmanufacturing an electronic device, comprising: (a) forming a firstelectrode and a second electrode which are parallel to each other on asubstrate, the first electrode comprising a couple of first electrodepads and a first heating element connecting the couple of the firstelectrode pads to each other, the second electrode comprising a coupleof second electrode pads and a second heating element connecting thecouple of the second electrode pads to each other; (b) forming acatalyst layer on the first heating element of the first electrode; (c)etching at least a portion of the substrate under the first and secondheating elements of the first and second electrodes; (d) forming anelectric field directed from the first electrode towards the secondelectrode by respectively applying a predetermined voltage to each ofthe first and second electrode pads of the first and second electrodesin order to generate heat from the first heating element to heat thecatalyst layer to a first temperature; and (e) growing a carbon nanotubefrom the catalyst layer using a gas containing carbon atoms to beconnected to the second electrode.
 11. The method of claim 10, whereinthe operation (b) further comprises forming a fixing layer on the secondheating element of the second electrode to fix the end of the carbonnanotube grown from the catalyst layer; the operation (d) furthercomprises heating the fixing layer to a second temperature which islower than a melting point of the fixing layer; and the operation (e)comprises fixing the carbon nanotube on the fixing layer such that anend of the carbon nanotube contacts the fixing layer.
 12. The method ofclaim 11, wherein the fixing layer comprises a low melting point metallayer.
 13. The method of claim 12, wherein the low melting point metallayer is formed of Al or Cu.
 14. The method of claim 10, wherein theoperation (d) comprises forming the electric field having an intensityof 1V/μm or higher.
 15. The method of claim 10, wherein, in theoperation (d), the first temperature is approximately 900 to 1,000° C.,and the operation (e) comprises forming a single-walled carbon nanotube.16. The method of claim 10, wherein the first heating element and thesecond heating element are formed of material independently selectedfrom the group consisting of Mo, W, SiC, and MoSi₂.
 17. The method ofclaim 10, wherein the operation (a) comprises forming a metal layer andpatterning the metal layer to form the couple of the first electrodepads, the couple of the second electrode pads, the first heating elementand the second heating element.
 18. The method of claim 10, wherein thecatalyst layer comprises a catalyst metal layer comprised of Ni, Fe, Co,or an alloy thereof.
 19. A method of manufacturing a field effecttransistor, comprising: (a) forming a gate electrode on a substrate; (b)forming a first electrode and a second electrode which are parallel toeach other on the substrate, the first electrode comprising a couple offirst electrode pads and a first heating element connecting the coupleof the first electrode pads to each other, the second electrodecomprising a couple of the second electrode pads and a second heatingelement connecting the couple of the second electrode pads; (c) forminga catalyst layer on the first heating element of the first electrode;(d) etching at least a portion of the substrate under the first andsecond heating elements of the first and second electrodes; (e) formingan electric field directed from the first electrode towards the secondelectrode by applying a respective predetermined voltage to each of thefirst and second electrode pads of the first and second electrodes inorder to generate heat from the first heating element to heat thecatalyst layer to a first temperature; and (f) growing a carbon nanotubefrom the catalyst layer using a gas containing carbon atoms to beconnected to the second electrode.
 20. The method of claim 19, whereinthe operation (c) further comprises forming a fixing layer on the secondheating element of the second electrode to fix the end of the carbonnanotube grown from the catalyst layer; the operation (e) furthercomprises heating the fixing layer to a second temperature which islower than a melting point of the fixing layer; and the operation (f)comprises fixing the carbon nanotube on the fixing layer such that anend of the carbon nanotube contacts the fixing layer.
 21. The method ofclaim 20, wherein the fixing layer comprises a low melting point metallayer.
 22. The method of claim 21, wherein the low melting point metallayer is formed of Al or Cu.
 23. The method of claim 19, wherein theoperation (e) is forming the electric field having an intensity of 1V/μmor higher.
 24. The method of claim 19, wherein, in the operation (e),the first temperature is approximately 900 to 1,000° C., and theoperation (f) comprises forming a single walled-carbon nanotube.
 25. Themethod of claim 19, wherein the first heating element and the secondheating element are formed of material independently selected from thegroup consisting of Mo, W, SiC, and MoSi₂.
 26. The method of claim 19,wherein the operation (b) comprises forming a metal layer and patterningthe metal layer to form the couple of the first electrode pads, thecouple of the second electrode pads, the first heating element and thesecond heating element.
 27. The method of claim 19, wherein the catalystlayer comprises a catalyst metal layer comprised of Ni, Fe, Co, or analloy thereof.